Description
AC for Gas Phase in Electronic Semiconductor
Generating Scenes
Photoresist cleaning, developer evaporation, etching process, thin film deposition, ion implantation, CVD process, etc.
Adsorption targets
Application Scenes
Clean room air purification, process exhaust treatment
Treatment Technology
- multi-stage AC adsorption
- AC adsorption-catalytic combustion (RCO/RTO) combination process
- chemical modification/catalytic advanced treatment
- steam/N₂ adsorption and desorption
Clarkson activated carbon series
CKC-ESG-TCLR-G, CKC-ESG-CHTC-G
Case：Arsenane Exhaust Treatment in a 12-inch Wafer Fab
- Background：AsH₃ emission concentration in CVD process 50-200 ppm, air volume 2000 m³/h
- Solution: pre-treatment (modified AC)+deep purification (composite adsorbent)
- Safety design: adsorption tower equipped with N₂ inert protection system to prevent spontaneous combustion of the adsorbent.
- Effect: Adsorbent life: 6 months, cumulative treatment capacity 120 kg AsH₃/m³ adsorbent; Emission concentration: <0.05 ppm, lower than GB 31573-2015: 0.1 ppm
AC for Liquid Phase in Electronic Semiconductor
Generating Scene
Photoresist cleaning, developer evaporation, etching process, thin film deposition and ion implantation, etc.
Adsorption targets
Organic pollutants, metal ions, oxidizers, VOCs, silicon particles
Application Scenes
Ultra-pure water terminal refining, chemical purification
Treatment Technology
- AC+ ion exchange resin
- AC+ ultra-filtration/reverse osmosis technology
- targeted high-efficiency adsorption
- chemical modification/catalytic advanced treatment, etc.
Clarkson activated carbon series
CKC-ESG-TCLR-L, CKC-ESG-CHTC-L
Case
- Background：a semiconductor company in Hefei uses high purity powdered AC to pre-treat developing and etching solution.
- Solution: modified AC selectively adsorbs metal ions (Cu²⁺, Fe³⁺, etc.)
- Effect: metal impurities were reduced from 50 ppb to less than 5 ppb.
